Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects

TL;DR

This study uses 2D and 3D TCAD simulations to analyze FeFET memristors, revealing that their multiple conductance states are due to polarization-driven percolation paths, emphasizing the importance of 3D modeling.

Contribution

It demonstrates the necessity of 3D simulations to accurately capture the physical behavior of FeFET memristors, linking conductance states to ferroelectric polarization patterns.

Findings

Multiple conductance states arise from polarization patterns.

3D simulations are essential for accurate device modeling.

Percolation current paths explain experimental observations.

Abstract

This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read conductance values experimentally observed in FeFETs stem from source to drain percolation current paths, which are governed by the polarization patterns in the ferroelectric domains. Such a physical picture makes 3D simulations indispensable to capture even the qualitative features of the device behaviour, not to mention the quantitative aspects.