Electrical detection of interfacial exchange field at the (ferromagnetic insulator)|(normal metal) interface using spin-dependent scattering

TL;DR

This paper demonstrates an experimental method using magnetoresistance measurements to detect the interfacial exchange field at the ferromagnetic insulator/normal metal interface, advancing nanoscale spintronics device development.

Contribution

It introduces a practical approach to detect interfacial exchange fields via magnetoresistance, enabling better control of spin-dependent phenomena in spintronics devices.

Findings

Magnetoresistance measurements reveal the interfacial exchange field.

Significant current-in-plane magnetoresistance observed in Py|Cu|EuS trilayer.

Detection method correlates magnetic state of EuS with magnetoresistance signals.

Abstract

The spin-orbit field and interfacial exchange field are two major interface phenomena, and the detection and manipulation of these fields can enable a variety of nanoscale spintronics devices. Optimizing the interfacial exchange field, which governs the spin-dependent scattering asymmetry at (ferromagnetic insulator)-(normal metal) interfaces, will pave the way for next-generation nanoscale, low-power insulator spintronics devices. Here, we demonstrate an experimental pathway to detect an interfacial exchange field between insulating ferromagnet EuS and non-magnetic Cu using magnetoresistance measurements, and show that the spin-dependent scattering at the common interface can lead to a significant current-in-plane magnetoresistance in Py$|$Cu$|$EuS trilayer Hall-bar device. Our experiment suggests that simple magnetoresistance measurements can be used to experimentally detect the interfacial exchange field and thereby the magnetic state of a ferromagnetic insulator.