Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth

TL;DR

This study demonstrates that by optimizing epitaxial growth conditions, the Curie temperature of Fe3GeTe2/Bi2Te3 heterostructures can be increased above room temperature, enabling advanced spintronic applications.

Contribution

It shows how molecular beam epitaxy can be used to systematically increase the Curie temperature of 2D magnetic heterostructures beyond room temperature.

Findings

Curie temperature increased from ~220 K to above room temperature.

Formation of Fe_mGe_nTe_2 compositions correlates with higher T_C.

Intercalation in vdW gaps may contribute to magnetic enhancement.

Abstract

Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature ($T_C$) in thin film Fe$_3$GeTe$_2$/Bi$_2$Te$_3$ from bulk-like values ($\sim$220 K) to above room temperature by increasing the growth temperature from 300 $^\circ$C to 375 $^\circ$C. For samples grown at 375 $^\circ$C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe$_m$Ge$_n$Te$_2$ compositions (e.g. Fe$_5$Ge$_2$Te$_2$ and Fe$_7$Ge$_6$Te$_2$) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for developing various Fe$_m$Ge$_n$Te$_2$/TI heterostructures with novel properties.