Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms

TL;DR

This study reports the observation of room-temperature quantum oscillations and hysteresis in the static magnetic susceptibility of silicon carbide epitaxial layers, revealing quantum effects in a semiconductor at ambient conditions.

Contribution

It demonstrates the occurrence of quantum Aharonov-Bohm oscillations and susceptibility hysteresis in silicon carbide films at room temperature, a novel observation in this material system.

Findings

Quantum Aharonov-Bohm oscillations observed at room temperature.

Hysteresis of static magnetic susceptibility detected.

Quantum effects linked to charge carrier interference on microdefects.

Abstract

The article presents the results of measurement and analysis of the field dependences of the static magnetic susceptibility of thin epitaxial silicon carbide films grown on the (110) surface of single-crystal silicon by the method of the coordinated substitution of atoms. In weak magnetic fields, the occurrence of two quantum effects at room temperature was experimentally found: the hysteresis of the static magnetic susceptibility and, in the field dependences, quantum Aharonov-Bohm oscillations of the static magnetic susceptibility. The simultaneous occurrence of these effects is a consequence of two- and one-particle interference of charge carriers (two-dimensional holes) on microdefects consisting of dipole centers with negative correlation energy (negative-U dipole centers).