Highly Efficient Room-Temperature Nonvolatile Magnetic Switching by Current in Fe3GaTe2 Thin Flakes

TL;DR

This paper demonstrates a highly efficient, room-temperature, nonvolatile magnetic switching in Fe3GaTe2 thin flakes, significantly reducing energy consumption compared to traditional spintronic devices, advancing magnetic vdW material applications.

Contribution

It reports the first room-temperature nonvolatile magnetic switching in a vdW ferromagnet with ultra-low current density and power dissipation, enabling more energy-efficient spintronic devices.

Findings

Room-temperature magnetic switching achieved in Fe3GaTe2

Switching current density and power dissipation are drastically reduced

Progress towards low-energy spintronic applications

Abstract

Effectively tuning magnetic state by using current is essential for novel spintronic devices. Magnetic van der Waals (vdW) materials have shown superior properties for the applications of magnetic information storage based on the efficient spin torque effect. However, for most of known vdW ferromagnets, the ferromagnetic transition temperatures lower than room temperature strongly impede their applications and the room-temperature vdW spintronic device with low energy consumption is still a long-sought goal. Here, we realize the highly efficient room-temperature nonvolatile magnetic switching by current in a single-material device based on vdW ferromagnet Fe3GaTe2. Moreover, the switching current density and power dissipation are about 300 and 60000 times smaller than conventional spin-orbit-torque devices of magnet/heavy-metal heterostructures. These findings make an important progress on the applications of magnetic vdW materials in the fields of spintronics and magnetic information storage.