Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

TL;DR

This paper reports a method to produce high-mobility, semiconducting epitaxial graphene on silicon carbide with a significant bandgap, promising for nanoelectronics applications.

Contribution

It introduces a quasi-equilibrium annealing process that creates well-ordered, large-area semiconducting epitaxial graphene with high mobility on silicon carbide.

Findings

Room temperature mobility exceeds 5000 cm2/Vs

Epitaxial graphene exhibits a 0.6 eV bandgap

The material is robust and easily patterned

Abstract

Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics.