Fast near-infrared photodetectors based on nontoxic and solution-processable AgBiS2

TL;DR

This paper presents a solution-processed, non-toxic AgBiS2 near-infrared photodetectors with high cut-off frequencies exceeding 1 MHz, suitable for real-time bioimaging and optical communication, overcoming toxicity and speed trade-offs.

Contribution

Developed high-speed, stable, solution-processed AgBiS2 photodetectors with tunable thickness for enhanced performance in NIR detection.

Findings

Achieved cut-off frequencies over 1 MHz under white light.

Demonstrated stable operation in air for bioimaging applications.

Controlled film thickness to optimize charge collection and reduce dark current.

Abstract

Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, there is currently a compromise between low toxicity and slow (<300 kHz cut-off frequency) organic materials versus faster detectors (>300 kHz cut-off frequency) based on compounds containing toxic lead or cadmium. Herein, we circumvent this trade-off by developing solution-processed AgBiS2 photodetectors with high cut-off frequencies under both white light (>1 MHz) and NIR (approaching 500 kHz) illumination. These high cut-off frequencies are due to the short transit distances of charge-carriers in the AgBiS2 photodetectors, which arise from the strong light absorption of these materials, such that film thicknesses well below 120 nm are adequate to absorb >65% of near-infrared to visible light. By finely controlling the thickness of the photoactive layer, we can modulate the charge-collection efficiency, achieve low dark current densities, and minimize the effects of ion migration to realize fast photodetectors that are stable in air. These outstanding characteristics enable real-time heartbeat sensors based on NIR AgBiS2 photodetectors. # equal contribution, * corresponding authors