Impact of plasma potential and plasma sheath composition on the InN PAMOCVD growth kinetics and structural properties
Zaheer Ahmad, Alexander Kozhanov
TL;DR
This study investigates how plasma potential and sheath composition influence InN film growth and structure in PA-MOCVD, highlighting the effects of external bias on process dynamics and film quality.
Contribution
It provides new insights into the role of plasma potential control in optimizing InN film growth and structural properties in PA-MOCVD processes.
Findings
Plasma potential significantly affects InN growth kinetics.
External DC bias alters plasma potential and film properties.
Growth parameters influence plasma sheath composition.
Abstract
In this paper, we present the effect of various growth parameters of PA-MOCVD on the plasma potential. The impact of varying plasma potential on the growth and structural properties of the InN films, and how the growth process and film properties will be affected if an external DC bias perturbs the plasma potential.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor materials and devices