Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: simulations versus experiment

TL;DR

This study compares relativistic molecular dynamics simulations with experimental data to analyze how 855 MeV electrons scatter in amorphous and crystalline silicon, highlighting differences in angular distributions.

Contribution

It introduces a simulation approach using two potentials to model electron-atom interactions and compares results with experiments and Monte Carlo simulations.

Findings

Differences in angular distributions between amorphous and crystalline silicon.

Simulation results align well with experimental data.

Potential-based simulations provide insights into scattering mechanisms.

Abstract

The angular distribution function of multiple scattering experienced by 855 MeV electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations using two types of the potentials that describe electron-atom interaction. The differences in the angular distributions of the beam particles in both media are analysed. The results obtained are compared to the experimental data and to the results of Monte Carlo simulations.