Valley-polarized Exitonic Mott Insulator in WS2/WSe2 Moir\'e Superlattice
Zhen Lian, Yuze Meng, Lei Ma, Indrajit Maity, Li Yan, Qiran Wu, Xiong, Huang, Dongxue Chen, Xiaotong Chen, Xinyue Chen, Mark Blei, Takashi, Taniguchi, Kenji Watanabe, Sefaattin Tongay, Johannes Lischner, Yong-Tao Cui,, Su-Fei Shi

TL;DR
This study reveals an excitonic Mott insulator state in WS2/WSe2 moiré superlattices, demonstrating strong exciton-electron interactions, exciton double occupancy, and enhanced valley polarization, advancing the understanding of correlated quantum states in 2D materials.
Contribution
It provides experimental evidence and theoretical analysis of excitonic Mott insulator formation in TMDC heterobilayers, a novel correlated bosonic state in moiré superlattices.
Findings
Observation of excitonic Mott insulator state via photoluminescence
Exciton double occupancy requires overcoming 30-40 meV repulsion
Enhanced valley polarization in the Mott insulator state
Abstract
Strongly enhanced electron-electron interaction in semiconducting moir\'e superlattices formed by transition metal dichalcogenides (TMDCs) heterobilayers has led to a plethora of intriguing fermionic correlated states. Meanwhile, interlayer excitons in a type-II aligned TMDC heterobilayer moir\'e superlattice, with electrons and holes separated in different layers, inherit this enhanced interaction and strongly interact with each other, promising for realizing tunable correlated bosonic quasiparticles with valley degree of freedom. We employ photoluminescence spectroscopy to investigate the strong repulsion between interlayer excitons and correlated electrons in a WS2/WSe2 moir\'e superlattice and combine with theoretical calculations to reveal the spatial extent of interlayer excitons and the band hierarchy of correlated states. We further find that an excitonic Mott insulator state…
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Taxonomy
Topics2D Materials and Applications · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
