Excitonic interplay between surface polar III-nitride quantum wells and MoS$_2$ monolayer

TL;DR

This paper explores the excitonic interactions in hybrid structures combining GaN quantum wells and MoS$_2$ monolayers, revealing defect passivation and strong excitonic interplay with potential for novel optoelectronic applications.

Contribution

It demonstrates the excitonic interplay and defect passivation in GaN/MoS$_2$ heterostructures, highlighting their potential for near-field optoelectronic devices.

Findings

Effective passivation of defect states at GaN surface by MoS$_2$ coating

Strong excitonic interactions observed between GaN QWs and MoS$_2$ monolayers

Potential for developing novel hybrid optoelectronic devices

Abstract

III-nitride wide bandgap semiconductors exhibit large exciton binding energies, preserving strong excitonic effects at room temperature. On the other hand, semiconducting two-dimensional (2D) materials, including MoS$_2$, also exhibit strong excitonic effects, attributed to enhanced Coulomb interactions. This study investigates excitonic interactions between surface GaN quantum well (QW) and 2D MoS$_2$ in van der Waals heterostructures by varying the spacing between these two excitonic systems. Optical property investigation first demonstrates the effective passivation of defect states at the GaN surface through MoS$_2$ coating. Furthermore, a strong interplay is observed between MoS$_2$ monolayers and GaN QW excitonic transitions. This highlights the interest of the 2D material/III-nitride QW system to study near-field interactions, such as F\"orster resonance energy transfer, which could open up novel optoelectronic devices based on such hybrid excitonic structures.