Single laser pulse induced magnetization switching in in-plane magnetized GdCo alloys

TL;DR

This study demonstrates deterministic all-optical magnetization switching in in-plane GdCo alloys using a single femtosecond laser pulse, revealing concentration-dependent switching times and challenging existing theories, with implications for spintronic devices.

Contribution

It provides the first comprehensive analysis of AO-HIS in in-plane GdCo thin films across a broad concentration range, expanding understanding beyond perpendicular magnetization cases.

Findings

Switching occurs in GdCo concentrations from 10% to 25%.

Switching time is less than 500 fs at lower Gd concentrations.

Findings challenge existing theoretical models of AO-HIS.

Abstract

The discovery of all-optical ultra-fast deterministic magnetization switching has opened up new possibilities for manipulating magnetization in devices using femtosecond laser pulses. Previous studies on single pulse all-optical helicity-independent switching (AO-HIS) have mainly focused on perpendicularly magnetized thin films. This work presents a comprehensive study on AO-HIS for in-plane magnetized GdxCo100-x thin films. Deterministic single femtosecond laser pulse toggle magnetization switching is demonstrated in a wider concentration range (x=10% to 25%) compared to the perpendicularly magnetized counterparts with GdCo thicknesses up to 30 nm. The switching time strongly depends on the GdxCo100-x concentration, with lower Gd concentration exhibiting shorter switching times (less than 500 fs). Our findings in this geometry provide insights into the underlying mechanisms governing single pulse AO-HIS, which challenge existing theoretical predictions. Moreover, in-plane magnetized GdxCo100-x thin films offer extended potential for opto-spintronic applications compared to their perpendicular magnetized counterparts.