Fingerprinting Defects in Hexagonal Boron Nitride via Multi-Phonon Excitation

TL;DR

This paper identifies the atomic structure responsible for yellow single photon emission in hexagonal boron nitride by combining experimental spectroscopy with theoretical analysis, advancing the understanding of its defect-related quantum emitters.

Contribution

It provides the first definitive identification of the atomic origin of yellow emitters in hexagonal boron nitride through combined experimental and theoretical methods.

Findings

Atomic structure of the defect responsible for yellow emission is identified.

Spectroscopic data matches theoretical predictions for specific carbon-related defects.

Results enable more reliable use of these emitters in quantum technologies.

Abstract

Single photon emitters in hexagonal boron nitride have gathered a lot of attention due to their favourable emission properties and the manifold of possible applications. Despite extensive scientific effort, the exact atomic origin of these emitters has remained unkown thus far. Recently, several studies have tied the emission in the yellow spectral region to carbon-related defects, but the exact atomic structure of the defects remains elusive. In this study, photoluminescence emission and excitation spectroscopy is performed on a large number of emitters within this region. By comparison of the experimental data with theoretical predictions, the origin of yellow single photon emission in hexagonal boron nitride is determined. Knowledge of this atomic structure and its optical properties is crucial for the reliable implementation of these emitters in quantum technologies.