On-chip coherent beam combination of waveguide amplifiers on Er$^{3+}$-doped thin film lithium niobate

TL;DR

This paper demonstrates on-chip coherent beam combination of two Er$^{3+}$-doped waveguide amplifiers on a lithium niobate platform, achieving higher output power than previous single waveguide amplifiers.

Contribution

It introduces a novel on-chip coherent beam combination method using an electro-optic modulator on Er: TFLN, enhancing output power in integrated photonics.

Findings

Achieved 12.9 mW output power in combined amplifiers

Surpassed power levels of previous single waveguide amplifiers

Demonstrated feasibility of on-chip coherent beam combining

Abstract

We demonstrate on-chip coherent beam combination of two waveguide amplifiers on Er$^{3+}$-doped thin film lithium niobate (Er: TFLN) platform. Our device is built based on an electro-optic modulator fabricated on Er: TFLN. The output power of the coherently combined amplifiers is measured as high as 12.9 mW, surpassing that of previous single waveguide amplifiers based on Er$^{3+}$-doped thin film lithium niobate platform.