Anomalous shift and optical vorticity in the steady photovoltaic current

TL;DR

This paper reveals that in non-centrosymmetric semiconductors, intraband Berry curvature and optical vortices significantly influence the bulk photovoltaic current, leading to nonlinear conductivities sensitive to light polarization.

Contribution

It uncovers the dominant role of intraband Berry curvature and optical vortices in photovoltaic shifts, highlighting their impact on nonlinear conductivities in realistic materials.

Findings

Intraband Berry curvature causes anomalous quasiparticle shifts.

Optical vortices make photovoltaic current highly polarization-sensitive.

Nonlinear conductivities of order mAV^{-2} are achievable without fine-tuning.

Abstract

Steady illumination of a non-centrosymmetric semiconductor results in a bulk photovoltaic current, which is contributed by real-space displacements (`shifts') of charged quasiparticles as they transit between Bloch states. The shift induced by interband excitation via absorption of photons has received the prevailing attention. However, this excitation-induced shift can be far outweighed ($\ll$) by the shift induced by intraband relaxation, or by the shift induced by radiative recombination of electron-hole pairs. This outweighing ($\ll$) is attributed to (i) time-reversal-symmetric, intraband Berry curvature, which results in an anomalous shift of quasiparticles as they scatter with phonons, as well as to (ii) topological singularities in the interband Berry phase (`optical vortices'), which makes the photovoltaic current extraordinarily sensitive to the linear polarization vector of the light source. Both (i-ii) potentially lead to nonlinear conductivities of order $mAV^{-2}$, without finetuning of the incident radiation frequency, band gap, or joint density of states. A case study of BiTeI showcases the anomalous shift and optical vorticity in a realistic material.