Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides
M. Zinkiewicz, M. Grzeszczyk, T. Kazimierczuk, M. Bartos, K., Nogajewski, W. Pacuski, K. Watanabe, T. Taniguchi, A. Wysmo{\l}ek, P., Kossacki, M. Potemski, A. Babi\'nski, M. R. Molas

TL;DR
This study explores low-temperature Raman excitation spectra of monolayer semiconducting transition metal dichalcogenides, revealing exciton-phonon interactions and higher-order phonon modes, demonstrating RSE's effectiveness in probing EPC.
Contribution
It provides detailed RSE spectra of four high-quality S-TMD monolayers, highlighting the role of excitonic states and demonstrating RSE as a powerful tool for studying exciton-phonon coupling.
Findings
Resonant enhancement of phonon modes in RSE spectra.
Correlation between exciton emissions and Raman-active modes.
Dependence of exciton-phonon coupling strength on excitonic ground state.
Abstract
Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature (=5~K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), MoS, MoSe, WS, and WSe, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, in-plane E and out-of-plane A, but the appearance of 1, 2, and higher-order phonon modes is recognised. The intensity profiles of the A modes in the investigated MLs resemble the emissions due to neutral excitons measured in the…
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Taxonomy
Topics2D Materials and Applications
