Impact of Oxygen Pressure on Ferroelectric Stability of La-doped Hafnia Grown by PLD
Badari Narayana Rao (1), Shintaro Yasui (2), Hiroko Yokota (3, 4), ((1) Center for Frontier Science, Chiba University, (2) Institute of, Innovative Research, Tokyo Institute of Technology, (3) Department of, Physics, Chiba University, (4) Department of Materials Science and
TL;DR
This study investigates how oxygen pressure during pulsed laser deposition affects the ferroelectric stability of La-doped hafnia films, revealing the importance of oxygen in ferroelectric switching mechanisms.
Contribution
It demonstrates the influence of oxygen pressure on ferroelectric phase stability in La-doped hafnia films and explores the role of non-lattice oxygen in ferroelectric switching.
Findings
Ferroelectric stability depends on oxygen pressure during deposition.
Oxygen pressure affects the ferroelectric properties of hafnia films.
Non-lattice oxygen plays an active role in ferroelectric switching.
Abstract
Thin films of HfO2 doped with 4% La were fabricated on LSMO/STO (100) substrates using pulsed laser deposition. The stability of the ferroelectric orthorhombic phase in the hafnia films was investigated with respect to varying oxygen pressure during deposition. X-ray diffraction and X-ray photoelectron spectroscopy measurements were carried out to analyze the structure and composition of the films and correlated with their ferroelectric properties. Surprisingly, the ferroelectricity of the hafnia films showed a dependence on oxygen pressure during deposition of LSMO bottom electrode as well. The reason for this dependence is discussed in terms of the active role of non-lattice oxygen in the ferroelectric switching of hafnia.
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Machine Learning in Materials Science