Ni cluster embedded (111)NiO layers grown on (0001)GaN films using pulsed laser deposition technique

TL;DR

This study demonstrates the growth of NiO layers embedded with Ni clusters on GaN substrates, revealing temperature-dependent structural and magnetic properties with potential applications in spintronics.

Contribution

It introduces a method to control Ni cluster properties within NiO layers on GaN, highlighting temperature effects on orientation, size, and magnetic behavior.

Findings

Cluster size and density increase with growth temperature.

Most Ni clusters align crystallographically with NiO matrix.

All films exhibit ferromagnetism at room temperature.

Abstract

(111) NiO epitaxial layers embedded with crystallographically oriented Ni-clusters are grown on c-GaN/Sapphire templates using pulsed laser deposition technique. Structural and magnetic properties of the films are examined by a variety of techniques including high resolution x-ray diffraction, precession-electron diffraction and superconducting quantum interference device magnetometry. The study reveals that the inclusion, orientation, shape, size, density and magnetic properties of these clusters depend strongly on the growth temperature (TG). Though, most of the Ni-clusters are found to be crystallographically aligned with the NiO matrix with Ni(111) parallel to NiO(111), clusters with other orientations also exist, especially in samples grown at lower temperatures. Average size and density of the clusters increase with TG . Proportion of the Ni(111) parallel to NiO(111) oriented clusters also improves as TG is increased. All cluster embedded films show ferromagnetic behaviour even at room temperature. Easy-axis is found to be oriented in the layer plane in samples grown at relatively lower temperatures. However, it turns perpendicular to the layer plane for samples grown at sufficiently high temperatures. This reversal of easy-axis has been attributed to the size dependent competition between the shape, magnetoelastic and the surface anisotropies of the clusters. This composite material thus has great potential to serve as spin-injector and spinstorage medium in GaN based spintronics of the future.