Interacting holes in gated WSe$_2$ quantum dots
Daniel Miravet, Abdulmenaf Alt{\i}nta\c{s}, Alina Wania, Rodrigues, Maciej Bieniek, Marek Korkusinski, Pawe{\l} Hawrylak

TL;DR
This paper develops a detailed atomistic theory for the electronic properties of holes in gated WSe$_2$ quantum dots, revealing how many-body interactions influence spin and valley states and induce phase transitions.
Contribution
It introduces a multi-scale, ab-initio based model combining tight-binding and configuration interaction techniques to study up to 6 holes in WSe$_2$ quantum dots with atomistic detail.
Findings
N=2 holes are in a valley and spin anti-ferromagnetic ground state
Higher hole numbers can lead to spontaneous valley and spin polarization
Quantum dot size and potential depth affect many-body phase transitions
Abstract
We develop here a theory of the electronic properties of a finite number of valence holes in gated WSe quantum dots, considering the influence of spin, valley, electronic orbitals, and many-body interactions. The single-particle wave functions are constructed by combining the spin-up and down states of the highest valence bulk bands employing a multi-million atom ab-initio based tight-binding model solved in the wave-vector space, allowing to study up to 100 nm radius quantum dots atomistically. The effects of the many-body interactions are determined using the configuration interaction (CI) technique, applied up to holes occupying up to 6 electronic shells with 42 orbitals. Our results show that N=2 holes are in valley and spin anti-ferromagnetic ground state, independent of the interaction strength and the quantum dot size. However, we predict that higher number of holes…
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Advanced Chemical Physics Studies
