Chirality-induced spin splitting in 1D InSeI

TL;DR

This study uses first-principles calculations to reveal that chiral 1D InSeI exhibits significant spin splitting and spin-momentum locking, with strain-induced bandgap transition, making it promising for chiral spintronics applications.

Contribution

First-principles analysis of chiral 1D InSeI uncovers spin splitting and strain-tunable electronic properties relevant for spintronics.

Findings

Opposite spin states in left- and right-handed InSeI

Significant spin splitting (~0.11 eV) at CBM under strain

Strain induces direct-to-indirect bandgap transition

Abstract

Spin-orbit coupling in chiral materials can induce chirality-dependent spin splitting, enabling electrical manipulation of spin polarization. Here, we use first-principles calculations to investigate the electronic states of chiral one-dimensional (1D) semiconductor InSeI, which has two enantiomorphic configurations with left- and right-handedness. We find that opposite spin states exist in the left- and right-handed 1D InSeI with significant spin splitting and spin-momentum collinear locking. Although the spin states at the conduction band minimum (CBM) and valence band maximum (VBM) of 1D InSeI are both nearly degenerate, a direct-to-indirect bandgap transition occurs when a moderate tensile strain ($\sim$4%) is applied along the 1D chain direction, leading to a sizable spin splitting ($\sim$0.11 eV) at the CBM. These findings indicate that 1D InSeI is a promising material for chiral spintronics.