Spin polarization gate device based on the chirality-induced spin selectivity and robust nonlocal spin polarization
Hiroaki Shishido, Yuta Hosaka, Kenta Monden, Akito Inui, Taisei Sayo,, Yusuke Kousaka, Yoshihiko Togawa

TL;DR
This paper investigates nonlocal spin polarization in chiral crystal devices, demonstrating controllable spin switching via charge current injection, and proposes a model explaining the long-range spin effects with potential for large-area spin control.
Contribution
It introduces a novel nonlocal spin polarization device based on chirality-induced effects, with experimental validation and a theoretical model explaining long-range spin phenomena.
Findings
Nonlocal spin polarization occurs regardless of material differences.
Simultaneous charge injection induces controllable spin switching.
The model successfully explains experimental data.
Abstract
Nonlocal spin polarization phenomena are thoroughly investigated in the devices made of chiral metallic single crystals of CrNbS and NbSi as well as of polycrystalline NbSi. We demonstrate that simultaneous injection of charge currents in the opposite ends of the device with the nonlocal setup induces the switching behavior of spin polarization in a controllable manner. Such a nonlocal spin polarization appears regardless of the difference in the materials and device dimensions, implying that the current injection in the nonlocal configuration splits spin-dependent chemical potentials throughout the chiral crystal even though the current is injected into only a part of the crystal. We show that the proposed model of the spin dependent chemical potentials explains the experimental data successfully. The nonlocal double-injection device may offer significant potential to…
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