110-GHz bandwidth integrated lithium niobate modulator without direct lithium niobate etching

TL;DR

This paper introduces a novel 110-GHz bandwidth lithium niobate modulator that avoids direct etching of TFLN, simplifying fabrication and enabling high-speed data transmission.

Contribution

The work presents an integrated TFLN modulator design using low-index rib loaded waveguides without direct etching, improving manufacturability and performance.

Findings

Achieved 110 GHz flat electro-optic response

Voltage-length product of 2.53 V·cm

Simplified fabrication process for high-speed modulators

Abstract

Integrated thin film lithium niobate (TFLN) modulators are emerging as an appealing solution to high-speed data processing and transmission due to their high modulation speed and low driving voltage. The key step in fabricating integrated TFLN modulators is the high-quality etching of TFLN, which typically requires long-term optimization of fabrication recipe and specialized equipment. Here we present an integrated TFLN modulator by incorporating low-index rib loaded waveguides onto TFLN without direct etching of TFLN. Based on our systematic investigation into the theory and design methodology of the proposed design, we experimentally demonstrated a TFLN etching-free Mach-Zehnder modulator, featuring a flat electro-optic response up to 110 GHz and a voltage-length product of 2.53 V cm. By significantly simplifying the fabrication process, our design opens up new ways of mass production of high-speed integrated TFLN modulators at low cost.