Modulating Spin Current Induced Effective Damping in $\beta-W/Py$ Heterostructures by a Systematic Variation in Resistivity of the Sputtered Deposited $\beta-W$ films
Soumik Aon, Sayani Pal, Subhadip Manna, Chiranjib Mitra, and Partha, Mitra

TL;DR
This study demonstrates how varying the resistivity of sputtered $eta$-W films in $eta$-W/Py heterostructures modulates effective damping, revealing insights into spin pumping and enabling faster magnetization switching.
Contribution
It systematically investigates the influence of resistivity on effective damping and spin pumping in $eta$-W/Py heterostructures, introducing resistivity as a tunable parameter for magnetic dynamics control.
Findings
Effective damping $eta$-W/Py increases with resistivity from 0.010 to 0.025.
Higher spin mixing conductance indicates strong spin pumping from Py into $eta$-W.
Low-temperature behavior shows enhanced damping due to spin pumping effects.
Abstract
Utilizing the spin-induced pumping from a ferromagnet (FM) into a heavy metal (HM) under the ferromagnetic resonance (FMR) condition, we report an enhancement in effective damping in - W/Py bilayers by systematically varying resistivity () of -W films. Different resistivity ranging from 100 -cm to 1400 -cm with a thickness of 8 nm can be achieved by varying the argon pressure () during the growth by the method of sputtering. The coefficient of effective damping is observed to increase from 0.010 to 0.025 with , which can be modulated by . We observe a modest dependence of on the sputtering power () while keeping the constant. dependence on both and suggests that there exists a strong correlation between and . It is…
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Taxonomy
TopicsSemiconductor materials and devices · Advanced Memory and Neural Computing · Metal and Thin Film Mechanics
