Ambient Temperature Growth and Superconducting Properties of Ti-V Alloy Thin Films

TL;DR

This study demonstrates ambient temperature growth of Ti-V alloy thin films with optimized superconducting properties, achieving a maximum critical temperature of 6.2 K, suitable for radiation detection applications.

Contribution

It reports a novel ambient temperature synthesis method for Ti-V alloy thin films with enhanced superconducting properties and application potential.

Findings

Maximum TC of 6.2 K in Ti40V60 with Ti underlayer

Confirmation of alloy crystal structure via GIXRD

Potential use in superconducting radiation detectors

Abstract

A study on the optimization of ambient temperature growth and superconducting properties of Ti-V alloy thin films grown on SiO2-coated Si substrate is reported here. These films have been synthesized by co-sputtering of Ti and V targets, and films having different Ti concentrations were deposited to get the optimized critical temperature (TC) of thin films close to the bulk value. The maximum TC of 5.2 K has been obtained in the Ti40V60 composition, which is further increased to 6.2 K when a 10 nm thick Ti underlayer is added below the Ti-V film. GIXRD measurements confirm the formation of Ti-V alloys in the desired crystal structure. The upper critical field (HC2) of the thin films has been estimated with the help of magnetotransport measurements. The utility of Ti-V alloy thin films in superconducting radiation detection applications is ascertained.