Disorder-Induced Phase Transitions in Three-Dimensional Chiral Second-Order Topological Insulator
Yedi Shen, Zeyu Li, Qian Niu, and Zhenhua Qiao

TL;DR
This paper investigates how disorder affects the phase transitions of three-dimensional chiral second-order topological insulators, revealing their robustness and the conditions under which they transition into metallic or insulating phases.
Contribution
The study provides a theoretical analysis of disorder-induced phase transitions in 3D chiral SOTIs, identifying critical disorder strengths and associated changes in electronic properties.
Findings
Nonzero density of states emerge at critical disorder strengths.
Bulk gap closes only at the $ ext{R}_{4z} ext{T}$-invariant point $oldsymbol{ extGamma}_3$.
Chiral SOTI remains robust with quantized conductance up to a certain disorder level.
Abstract
Topological insulators have been extended to higher-order versions that possess topological hinge or corner states in lower dimensions. However, their robustness against disorder is still unclear. Here, we theoretically investigate the phase transitions of three-dimensional (3D) chiral second-order topological insulator (SOTI) in the presence of disorders. Our results show that, by increasing disorder strength, the nonzero densities of states of side surface and bulk emerge at critical disorder strengths of and , respectively. The spectral function indicates that the bulk gap is only closed at one of the -invariant points, i.e., . The closing of side surface gap or bulk gap is ascribed to the significant decrease of the elastic mean free time of quasi-particles. Because of the localization of side surface states, we find that the 3D chiral…
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Taxonomy
TopicsTopological Materials and Phenomena · Quantum and electron transport phenomena · Quantum many-body systems
