A Compact Model of Threshold Switching Devices for Efficient Circuit Simulations

TL;DR

This paper introduces a new compact threshold switching device model suitable for efficient circuit simulations, combining macro, descriptive, and physical models, and validated with real device data.

Contribution

The paper develops a comprehensive multi-level model of threshold switching devices, including a physical model with an internal state variable, optimized for circuit simulation.

Findings

Model accurately fits measured i-v data

Physical model captures switching process dynamics

Efficient for circuit-level simulations

Abstract

In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a descriptive model was extracted and implemented in MATLAB, which is based on the macro model. This macro model was extended to develop a physical model that describes the processes that occur during the threshold switching. The physical model derived comprises a delay structure with few electrical components adjacent to the second junction. The delay model incorporates an internal state variable, which is crucial to transform the descriptive model into a compact model and to parameterize it in terms of electrical parameters that represent the component's behavior. Finally, we applied our model by fitting measured i-v data of an OTS device manufactured by Western Digital Research.