Electron-hole asymmetry in the phase diagram of carrier-tuned CsV$_3$Sb$_5$

TL;DR

This study investigates how electron doping affects the phase diagram of the kagome superconductor CsV$_3$Sb$_5$, revealing asymmetry compared to hole doping with implications for understanding its electronic properties.

Contribution

It provides the first detailed comparison of electron- and hole-doping effects on CsV$_3$Sb$_5$, highlighting the asymmetry in their impact on charge density wave and superconducting transitions.

Findings

Electron doping slightly suppresses charge density wave and superconductivity.

Hole doping has a different, less perturbative effect on phase transitions.

Electronic phase diagrams differ significantly between electron- and hole-doping.

Abstract

Here we study the effect of electron doping the kagome superconductor CsV$_3$Sb$_5$. Single crystals and powders of CsV$_3$Sb$_{5-x}$Te$_x$ are synthesized and characterized via magnetic susceptibility, nuclear quadrupole resonance, and x-ray diffraction measurements, where we observe a slight suppression of the charge density wave transition temperature and superconducting temperature with the introduction of electron dopants. In contrast to hole-doping, both transitions survive relatively unperturbed up to the solubility limit of Te within the lattice. A comparison is presented between the electronic phase diagrams of electron- and hole-tuned CsV$_3$Sb$_5$.