Giant superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire / topological Dirac semimetal planar heterostructures
Keita Ishihara, Le Duc Anh, Tomoki Hotta, Kohdai Inagaki, Masaki, Kobayashi, and Masaaki Tanaka

TL;DR
This paper presents a novel ion-beam patterning method to create superconducting nanostructures in topological Dirac semimetal films, revealing giant non-reciprocal superconducting effects with potential for quantum device applications.
Contribution
It introduces a direct ion-beam patterning technique to form superconducting beta-tin structures in topological materials, enabling scalable topological superconducting devices.
Findings
Giant superconducting diode effect with 69% critical current change
Maximum rectification ratio when magnetic field is parallel to current
Oscillating rectification sign with increasing magnetic field
Abstract
Superconductor/topological material heterostructures are intensively studied as a platform for topological superconductivity and Majorana physics. However, the high cost of nanofabrication and the difficulty of preparing high-quality interfaces between the two dissimilar materials are common obstacles that hinder the observation of intrinsic physics and the realisation of scalable topological devices and circuits. Here, we demonstrate an innovative method to directly draw nanoscale superconducting beta-tin (beta-Sn) patterns of any shape in the plane of a topological Dirac semimetal (TDS) alpha-tin (alpha-Sn) thin film by irradiating a focused ion beam (FIB). We utilise the property that alpha-Sn undergoes a phase transition to superconducting beta-Sn upon heating by FIB. In beta-Sn nanowires embedded in a TDS alpha-Sn thin film, we observe giant non-reciprocal superconducting…
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Taxonomy
TopicsTopological Materials and Phenomena · Cold Atom Physics and Bose-Einstein Condensates · Graphene research and applications
