Interacting Random-field Dipole Defect Model for Heating in Semiconductor-based Qubit Devices

TL;DR

This paper presents a model explaining frequency shifts in semiconductor qubits due to heating, using an interacting random-field glass of two-level systems, which accounts for non-monotonic temperature dependence.

Contribution

It introduces a novel interacting random-field dipole defect model that explains qubit frequency drift and heating effects in semiconductor devices.

Findings

Frequency shift can be non-monotonic with temperature.

The model constrains possible two-level system behaviors.

Charge noise and frequency drift are linked through the model.

Abstract

Semiconductor qubit devices suffer from the drift of important device parameters as they are operated. The most important example is a shift in qubit operating frequencies. This effect appears to be directly related to the heating of the system as gate operations are applied. We show that the main features of this phenomenon can be explained by the two-level systems that can also produce charge noise, if these systems are considered to form an interacting random-field glass. The most striking feature of the theory is that the frequency shift can be non-monotonic in temperature. The success of the theory narrows considerably the possible models for the two-level systems.