Enhanced Nonlinearity of Epsilon-Near-Zero Indium Tin Oxide Nanolayers with Tamm Plasmon-Polariton States
Tornike Shubitidze, Wesley A. Britton, Luca Dal Negro

TL;DR
This paper demonstrates how Tamm plasmon-polariton structures significantly enhance the nonlinear optical response of epsilon-near-zero ITO nanolayers, enabling more efficient infrared photonic devices.
Contribution
It introduces a method to boost the nonlinear index variation of ITO nanolayers using Tamm plasmon-polariton structures, with experimental validation of enhanced nonlinearity.
Findings
Refractive index variations up to non-perturbative regime achieved.
Enhanced nonlinear response due to excitation of Tamm states.
Potential for improved infrared photonic devices.
Abstract
Recently, materials with vanishingly small permittivity, known as epsilon-near-zero (ENZ) media, emerged as promising candidates to achieve nonlinear optical effects of unprecedented magnitude on a solid-state platform. In particular, the ENZ behavior of Indium Tin Oxide (ITO) thin films resulted in Kerr-type nonlinearity with non-perturbative refractive index variations that are key to developing more efficient Si-compatible devices with sub-wavelength dimensions such as all-optical switchers, modulators, and novel photon detectors. In this contribution, we propose and demonstrate enhancement of the nonlinear index variation of 30 nm-thick ITO nanolayers by silicon dioxide/silicon nitride (SiO2/SiN) Tamm plasmon-polariton structures fabricated by radio-frequency magnetron sputtering on transparent substrates under different annealing conditions. In particular, we investigate the linear…
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Taxonomy
TopicsPlasmonic and Surface Plasmon Research · Photonic and Optical Devices · Photonic Crystals and Applications
