Temperature Dependent Low-Frequency Noise Characteristics of NiO$_x$/Ga$_2$O$_3$ p-n Heterojunction Diodes

TL;DR

This study investigates how temperature affects low-frequency noise in NiO$_x$/Ga$_2$O$_3$ p-n diodes, revealing temperature-dependent spectral features, material changes at high temperatures, and positioning these diodes among UWBG semiconductor devices.

Contribution

It provides new insights into the temperature-dependent noise behavior of NiO$_x$/Ga$_2$O$_3$ heterojunctions and demonstrates their intermediate noise levels among UWBG semiconductor devices.

Findings

Noise spectral density is 1/f-type near room temperature.

Lorentzian components appear at higher temperatures and currents.

Material changes at T ≈ 380°C reduce noise levels.

Abstract

We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). We observed an intriguing non-monotonic dependence of the noise on temperature near T = 380$^\circ$ K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes was determined to be on the order of 10$^{-14}$ cm$^2$/Hz (f = 10 Hz) at 0.1 A/cm$^2$ current density. In terms of the noise level, NiO$_x$/Ga$_2$O$_3$ p-n diodes occupy an intermediate position among devices of various designs implemented with different ultra-wide-band-gap (UWBG) semiconductors. The obtained results are important for understanding the electronic properties of the UWBG heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.