Theory of reactions between hydrogen and group-III acceptors in silicon
Jos\'e Coutinho, Diana Gomes, Vitor J. B. Torres, Tarek O. Abdul, Fattah, Vladimir P. Markevich, Anthony R. Peaker

TL;DR
This paper provides a first-principles analysis of hydrogen interactions with group-III acceptors in silicon, explaining degradation mechanisms in solar cells and identifying key defect complexes affecting performance.
Contribution
It offers a detailed thermodynamic and kinetic model of acceptor-hydrogen reactions, including complex formation and dissociation, with implications for silicon solar cell stability.
Findings
BH₂ complex forms during H₂ reactions with boron.
Activation barriers (~1 eV) align with experimental degradation energies.
Heavier dihydrogenated acceptors act as shallow donors.
Abstract
The thermodynamics of several reactions involving atomic and molecular hydrogen with group-III acceptors is investigated. The results provide a first-principles-level account of thermally- and carrier-activated processes involving these species. Acceptor-hydrogen pairing is revisited as well. We present a refined physicochemical picture of long-range migration, compensation effects, and short-range reactions, leading to fully passivated structures, where is a group-III acceptor element. The formation and dissociation of acceptor-H and acceptor-H complexes is considered in the context of Light and elevated Temperature Induced Degradation (LeTID) of silicon-based solar cells. Besides explaining observed trends and answering several fundamental questions regarding the properties of acceptor-hydrogen pairing, we find that the BH complex is…
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