Electronic structure and lattice dynamics of 1T-VSe$_2$: origin of the 3D-CDW
Josu Diego, D. Subires, A. H. Said, D. A. Chaney, A. Korshunov, G., Garbarino, F. Diekmann, K. Mahatha, V. Pardo, J. Strempfer, Pablo J., Bereciartua Perez, S. Francoual, C. Popescu, M. Tallarida, J. Dai, Raffaello, Bianco, Lorenzo Monacelli, Matteo Calandra, A. Bosak

TL;DR
This study combines experimental and theoretical methods to elucidate the origin of the 3D charge density wave in 1T-VSe$_2$, highlighting the dominant role of momentum-dependent electron-phonon interactions over Fermi surface nesting.
Contribution
It provides a comprehensive analysis of the electronic structure and lattice dynamics of 1T-VSe$_2$, emphasizing the importance of momentum-dependent electron-phonon coupling in CDW formation.
Findings
Soft phonon mode observed at room temperature
Electron-phonon interaction dominates CDW origin
Pressure has limited effect on soft mode frequency
Abstract
In order to characterize in detail the charge density wave (CDW) transition of 1-VSe, its electronic structure and lattice dynamics are comprehensively studied by means of x-ray diffraction, angle resolved photoemission (ARPES), diffuse and inelastic x-ray scattering (IXS), and state-of-the-art first principles density functional theory calculations. Resonant elastic x-ray scattering (REXS) does not show any resonant enhancement at either V or Se K-edges, indicating that the CDW peak describes a purely structural modulation of the electronic ordering. ARPES identifies (i) a pseudogap at TT, which leads to a depletion of the density of states in the plane at TT, and (ii) anomalies in the electronic dispersion reflecting a sizable impact of phonons on it. A diffuse scattering precursor, characteristic of soft phonons, is observed at room temperature…
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Taxonomy
TopicsOrganic and Molecular Conductors Research · Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films
