Commande rapproch\'ee d'un IGBT pour l'att\'enuation des perturbations \'electromagn\'etiques

TL;DR

This paper proposes a new IGBT driving method that controls the grid current profile to reduce electromagnetic interference, evaluated through SPICE simulations and compared with existing techniques.

Contribution

A novel IGBT gate-driving approach based on controlling the grid current profile, enabled by new market-available drivers, to mitigate EMI during switching.

Findings

The proposed method effectively reduces EMI in IGBTs.

Simulation results show improved performance over the CATS method.

Quantitative comparison validates the new approach.

Abstract

Power transistors such as IGBTs and MOSFETs are a source of electromagnetic interference (EMI) during switching due to rapid voltage/current variations. Increasing the switching time can reduce the generation of EMI but increases losses. Several driving methods to reduce EMI have been proposed in the literature. In this work, a driving method based on the control of a grid current profile, made possible by new drivers available on the market, is proposed. This is based on the gate-source voltage of transistor as as a function of the charge injected into the gate. In order to demonstrate the performance of this method, it is evaluated by SPICE simulation using a figure of merit that enables it to be compared quantitatively with a reference method known as CATS (Commande autour de la Tension de Seuil).