$ \mathrm{Sr}_{4}\mathrm{Al}_{2}\mathrm{O}_{7}$: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes
Leyan Nian, Haoying Sun, Zhichao Wang, Duo Xu, Hao Bo, Shengjun, Yan,, Yueying Li, Jian Zhou, Yu Deng, Yufeng Hao, and Yuefeng Nie

TL;DR
This paper introduces Sr4Al2O7 as a new sacrificial layer with a high water dissolution rate, enabling faster and more efficient fabrication of freestanding oxide membranes for electronic applications.
Contribution
It demonstrates that Sr4Al2O7 dissolves about ten times faster than previous layers, significantly improving the membrane fabrication process.
Findings
Sr4Al2O7 has a dissolution rate ten times higher than Sr3Al2O6.
High dissolution rate linked to discrete Al-O networks and soluble Sr-O species.
Facilitates faster, wafer-scale production of freestanding oxide membranes.
Abstract
Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces. However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, we introduce a new member of the family,, and demonstrate its high…
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Taxonomy
TopicsFerroelectric and Piezoelectric Materials · Layered Double Hydroxides Synthesis and Applications · Electronic and Structural Properties of Oxides
