Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate
Xiao Wang, Zhi-Yu Lin, Yu-Min Zhang, Guo-Qiang Ren, Ke Xu
TL;DR
This paper investigates how different substrates affect the leakage current in gallium nitride planar Schottky barrier diodes by analyzing temperature-dependent current-voltage characteristics.
Contribution
It provides experimental insights into substrate influence on leakage mechanisms in GaN SBDs, highlighting differences between sapphire and GaN substrates.
Findings
Substrate type significantly impacts leakage current behavior.
Temperature influences the leakage current mechanisms.
Experimental analysis reveals distinct transport processes on different substrates.
Abstract
The effects of different substrates on the off state leakage current in gallium nitride planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current voltage characteristics.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsGaN-based semiconductor devices and materials · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices