Ru doping induced spin frustration and enhancement of the room-temperature anomalous Hall effect in La2/3Sr1/3MnO3 films

TL;DR

This study demonstrates that Ru doping in La2/3Sr1/3MnO3 films induces spin frustration and significantly enhances the room-temperature anomalous Hall effect, offering new avenues for oxide-based spintronic device development.

Contribution

It reveals how Ru doping induces spin frustration and enhances the AHE in La2/3Sr1/3MnO3 films, a novel approach for improving spintronic functionalities.

Findings

Ru doping up to 20% enhances AHE resistivity from nOhmcm to uOhmcm

Ru doping causes competition between ferromagnetic and antiferromagnetic interactions

Spin frustration and spin-glass states facilitate strong skew-scattering, boosting AHE

Abstract

In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, we exploit the Ru doping-enhanced AHE in LSMRO epitaxial films. As the B-site Ru doping level increases up to 20 percent, the anomalous Hall resistivity at room temperature can be enhanced from nOhmcm to uOhmcm scale. Ru doping leads to strong competition between ferromagnetic double-exchange interaction and antiferromagnetic super-exchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. Our findings could pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices.