Subwavelength Raman Laser Driven by Quasi Bound State in the Continuum

TL;DR

This paper proposes a fully subwavelength gallium phosphide nanocylinder resonator-based Raman laser utilizing quasi bound states in the continuum, achieving low threshold and miniaturization for chip-scale applications.

Contribution

It introduces the first prototype of a low-threshold, nanoscale Raman laser operating in the visible range with all dimensions below the wavelength.

Findings

Design demonstrates a lasing threshold of approximately 21 mW.

Spectral matching of high-Q modes enables efficient Raman lasing.

The device is fully subwavelength, suitable for ultracompact applications.

Abstract

Raman lasers is an actively developing field of nonlinear optics aiming to create efficient frequency converters and various optical sensors. Due to the growing importance of ultracompact chip-scale technologies, there is a constant demand for optical devices miniaturization, however, the development of a nanoscale Raman laser remains a challenging endeavor. In this work, we propose a fully subwavelength Raman laser operating in visible range based on a gallium phosphide nanocylinder resonator supporting a quasi bound state in the continuum (quasi-BIC). We perform precise spectral matching of nanoparticle's high-$Q$ modes with the pump and detuned Raman emission wavelengths. As a result of our simulations, we demonstrate a design of Raman nanolaser, ready for experimental realization, with the lasing threshold expected to be as low as $P_{\mathrm{th}} \approx 21~\mathrm{mW}$. The suggested configuration, to the best of our knowledge, represents the very first prototype of a low-threshold Raman nanolaser with all the dimensions smaller than the operational wavelength.