Magneto-transport and electronic structures in MoSi$_2$ bulks and thin films with different orientations

TL;DR

This study investigates the magneto-transport properties and electronic structures of MoSi$_2$ in bulk and thin film forms, revealing giant magnetoresistance, surface states, and weak anti-localization effects relevant for electronic applications.

Contribution

It provides a comprehensive analysis of MoSi$_2$'s magneto-transport behavior and electronic surface states, including experimental and first-principles insights.

Findings

Giant magnetoresistance of 1000% in bulk samples

Presence of surface states confirmed by first-principles calculations

Weak anti-localization behavior observed in thin films

Abstract

We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi$_2$ thin films is significantly low and nearly independent of the temperature, which is important for electronic devices.