Intrinsic ferroelectric switching in two-dimension $\alpha$-In$_2$Se$_3$

TL;DR

This study clarifies the ferroelectric properties of 2D $ ext{In}_2 ext{Se}_3$, demonstrating the absence of in-plane ferroelectricity and revealing atomistic mechanisms of vertical polarization switching with implications for nanoelectronics.

Contribution

It conclusively dismisses previous claims of in-plane ferroelectricity in $ ext{In}_2 ext{Se}_3$ and introduces a deep-learning-assisted simulation approach to understand vertical polarization switching mechanisms.

Findings

In-plane ferroelectricity in $ ext{In}_2 ext{Se}_3$ is dismissed.

Atomistic mechanisms of vertical polarization switching are revealed.

Domain wall velocity follows a universal creep equation with a dynamical exponent of 2.

Abstract

Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its electrically addressable vertical polarization has attracted significant interest. However, the understanding of many fundamental characteristics of this material, such as the existence of spontaneous in-plane polarization and switching mechanisms, remains controversial, marked by conflicting experimental and theoretical results. Here, our combined experimental characterizations with piezoresponse force microscope and symmetry analysis conclusively dismiss previous claims of in-plane ferroelectricity in $\alpha$-In$_2$Se$_3$. The processes of vertical polarization switching in monolayer $\alpha$-In$_2$Se$_3$ are explored with deep-learning-assisted large-scale molecular dynamics simulations, revealing atomistic mechanisms fundamentally different from those of bulk ferroelectrics. Despite lacking in-plane effective polarization, 1D domain walls can be moved by both out-of-plane and in-plane fields, exhibiting unusual avalanche dynamics characterized by abrupt, intermittent moving patterns. The propagating velocity at various temperatures, field orientations, and strengths can be statistically described with a universal creep equation, featuring a dynamical exponent of 2 that is distinct from all known values for elastic interfaces moving in disordered media. This work rectifies a long-held misunderstanding regarding the in-plane ferroelectricity of $\alpha$-In$_2$Se$_3$, and the quantitative characterizations of domain wall velocity will hold broad implications for both the fundamental understanding and technological applications of 2D ferroelectrics.