Optical Memory in a Microfabricated Rubidium Vapor Cell

TL;DR

This paper demonstrates a scalable, high-bandwidth optical quantum memory using a microfabricated rubidium vapor cell, achieving notable efficiency and signal-to-noise ratio suitable for quantum network applications.

Contribution

It introduces a novel ground-state quantum memory scheme in a microfabricated vapor cell operating in the hyperfine Paschen-Back regime, enabling scalable quantum memory with high bandwidth.

Findings

Achieved 80 ns storage time with 3.12% end-to-end efficiency.

Demonstrated bandwidth-matching with hundreds of megahertz pulses.

Achieved a signal-to-noise ratio of 7.9 at the single-photon level.

Abstract

Scalability presents a central platform challenge for the components of current quantum network implementations that can be addressed by microfabrication techniques. We demonstrate a high-bandwidth optical memory using a warm alkali atom ensemble in a microfabricated vapor cell compatible with wafer-scale fabrication. By applying an external tesla-order magnetic field, we explore a novel ground-state quantum memory scheme in the hyperfine Paschen-Back regime, where individual optical transitions can be addressed in a Doppler-broadened medium. Working on the $^{87}$Rb D$_2$ line, where deterministic quantum dot single-photon sources are available, we demonstrate bandwidth-matching with hundreds of megahertz broad light pulses keeping such sources in mind. For a storage time of 80 ns we measure an end-to-end efficiency of $\eta_{e2e}^{\text{80ns}} = 3.12(17)\%$, corresponding to an internal efficiency of $\eta_{\text{int}}^{\text{0ns}} = 24(3)\%$, while achieving a signal-to-noise ratio of $\text{SNR} = 7.9(8)$ with coherent pulses at the single-photon level.