Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes

TL;DR

This paper refutes previous claims that invasive voltage probes cause mobility overestimation in MoS$_2$ transistors, demonstrating that non-linearity is an intrinsic property of disordered rippled-MoS$_2$ systems.

Contribution

It provides new experimental evidence showing that non-linearity in rippled-MoS$_2$ is intrinsic, challenging prior contact-effect explanations and critiquing Wu's ideal-system model.

Findings

Non-linearity is intrinsic to disordered rippled-MoS$_2$

Invasive probes do not cause mobility overestimation

Wu's model is incompatible with disordered systems

Abstract

In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion.