Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Raimondo Cecchini, Christian Martella, Claudia Wiemer, Alessio, Lamperti, Alberto Debernardi, Lucia Nasi, Laura Lazzarini, Alessandro Molle,, Massimo Longo

TL;DR
This paper demonstrates a scalable MOCVD process for growing antimonene-like nanocrystals on germanium, advancing the potential for integrating 2D antimonene in opto-electronic devices.
Contribution
It introduces a novel bottom-up MOCVD method assisted by gold nanoparticles for epitaxial growth of antimonene-like nanocrystals on germanium surfaces.
Findings
Growth mechanism involves germanium etching catalyzed by gold nanoparticles.
Ab-initio calculations support epitaxial relationship and strain effects.
Process is compatible with current semiconductor manufacturing.
Abstract
Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However, the exploitation of monolayer or few-layer antimonene and other 2D materials in novel opto-electronic devices is still hurdled by the lack of scalable processes. Here, we demonstrated the viability of a bottom-up process for the epitaxial growth of antimonene-like nanocrystals (ANCs), based on a Metal-Organic Chemical Vapor Deposition (MOCVD) process, assisted by gold nanoparticles (Au NPs) on commensurate (111)-terminated Ge surfaces. The growth mechanism was investigated by large- and…
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