The electrostatic fate of $N$-layer moir\'e graphene

TL;DR

This paper investigates the electrostatic effects in multilayer moiré graphene, explaining experimental phenomena through Hartree-Fock analysis and proposing a new flat-band paradigm for large-N devices to enable correlated states.

Contribution

The study provides a detailed Hartree-Fock analysis of electrostatic effects in N-layer moiré graphene and introduces a novel flat-band paradigm for large-N systems.

Findings

Electrostatic effects reshape electronic bands in N-layer moiré graphene.

Hartree and layer potentials influence the phase diagram and suppress exchange-driven phenomena for N > 5.

A new flat-band paradigm is proposed to enhance exchange effects in large-N devices.

Abstract

Twisted $N$-layer graphene (TNG) moir\'e structures have recently been shown to exhibit robust superconductivity similar to twisted bilayer graphene (TBG). In particular for $N=4$ and $N=5$, the phase diagram features a superconducting pocket that extends beyond the nominal full filling of the flat band. These observations are seemingly at odds with the canonical understanding of the low-energy theory of TNG, wherein the TNG Hamiltonian consists of one flat-band sector and accompanying dispersive bands. Using a self-consistent Hartee-Fock treatment, we explain how the phenomenology of TNG can be understood through an interplay of in-plane Hartree and inhomogeneous layer potentials, which cause a reshuffling of electronic bands. We extend our understanding beyond the case of N = 5 realized in experiment so far. We decribe how the Hartree and layer potentials control the phase diagram for devices with N $>$ 5 and tend to preclude exchange-driven correlated phenomena in this limit. To circumvent these electrostatic constraints, we propose a new flat-band paradigm that could be realized in large-N devices by taking advantage of two nearly flat sectors acting together to enhance the importance of exchange effects.