Useful Circuit Analogies to Model THz Field Effect Transistors

TL;DR

This paper introduces circuit analogies for modeling THz FETs, linking physical device parameters to equivalent circuit components, verified through simulations and analytical comparisons.

Contribution

It establishes useful circuit analogies for THz FETs based on the electron fluid model, enhancing understanding and modeling accuracy.

Findings

Circuit models accurately represent THz FET behavior

Simulation results match analytical equations

Equivalent circuit parameters relate to physical device properties

Abstract

The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and equivalent circuit components in traditional parallel resistor, inductor, and capacitor (RLC) and transmission models for cavity structures. Verification of these models is performed using PSpice to simulate the frequency dependent voltage output and compare with analytical equations for the drain potential as a function of frequency.