Layer-dependent electronic structures and magnetic ground states of polar-polar $\rm{LaVO_3/KTaO_3}$ (001) heterostructures
Shubham Patel, Narayan Mohanta, Snehasish Nandy, Subhendra D. Mahanti,, A Taraphder

TL;DR
This study uses first-principles calculations to explore the electronic and magnetic properties of LaVO3/KTaO3 heterostructures, revealing Lifshitz transitions, layer-dependent magnetism, and an insulator-metal transition at a specific layer thickness.
Contribution
It provides a detailed theoretical analysis of the layer-dependent electronic and magnetic structures of polar-polar LaVO3/KTaO3 heterostructures, highlighting the conditions for metallicity and magnetic states.
Findings
Multiple Lifshitz transitions within $t_{2g}$ bands can be tuned by layer number or gate voltage.
Interlayer AFM is the most energetically favorable magnetic configuration.
An insulator-metal transition occurs at four LVO layers, consistent with experiments.
Abstract
Employing a first-principles and model Hamiltonian approach, we work out the electronic properties of polar-polar LaVO/KTaO (LVO/KTO, 001) heterostrctures, with up to six layers of KTO and five layers of LVO. Our analyses indicate the existence of multiple Lifshitz transitions (LTs) within the bands, which can be fine-tuned by adjusting the number of LVO layers or applying gate voltage. Contrary to the experimental report, spin-orbit coupling is found to be negligible, originating solely from the Ta -derived band of KTO, while the 5 and 5 bands are considerably away from the Fermi level while LVO overlayers having no role in it. Magnetic properties of the heterostructures, due to Vanadium ions, exhibit a pronounced sensitivity to the number of LVO and KTO layers. Our calculations indicate that the interlayer AFM, (so called A-AFM), is…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics
