Isotope engineering for spin defects in van der Waals materials
Ruotian Gong, Xinyi Du, Eli Janzen, Vincent Liu, Zhongyuan Liu,, Guanghui He, Bingtian Ye, Tongcang Li, Norman Y. Yao, James H. Edgar, Erik A., Henriksen, Chong Zu

TL;DR
This paper demonstrates that isotope engineering of hexagonal boron nitride significantly improves the coherence and sensing capabilities of spin defects, advancing quantum technology applications.
Contribution
It introduces a method of isotope engineering in hBN to enhance spin defect coherence and quantum sensing performance, a novel approach in this material.
Findings
Narrower and less crowded spin transitions in isotopically purified hBN.
Extended coherence time T2 and relaxation time T1 for V_B^- centers.
Enhanced magnetic field sensitivity by factors of 4 (DC) and 2 (AC).
Abstract
Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center () in hexagonal boron nitride (hBN), we grow isotopically purified crystals. Compared to in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded spin transitions as well as extended coherence time and relaxation time . For quantum sensing, centers in our samples exhibit a factor of…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsDiamond and Carbon-based Materials Research · Graphene research and applications · 2D Materials and Applications
