Stabilization of Ferroelectric Hf0.5Zr0.5O2 Epitaxial Films via Monolayer Reconstruction Driven by Interfacial Redox Reaction
Yufan Shen, Mitsutaka Haruta, I-Ching Lin, Lingling Xie, Daisuke Kan,, Yuichi Shimakawa

TL;DR
This study demonstrates how interfacial redox-driven monolayer reconstruction stabilizes ferroelectric Hf0.5Zr0.5O2 epitaxial films on perovskite substrates, revealing a new growth mechanism for metastable ferroelectric phases.
Contribution
The paper uncovers a novel stabilization mechanism involving monolayer reconstruction driven by interfacial redox reactions for ferroelectric Hf0.5Zr0.5O2 films on dissimilar oxides.
Findings
Monolayer reconstruction facilitates epitaxial growth of ferroelectric Hf0.5Zr0.5O2.
Interfacial redox reactions create a template monolayer.
Stabilization of metastable ferroelectric phase on perovskite substrate.
Abstract
The binary fluorite oxide Hf0.5Zr0.5O2 tends to grab a significant amount of notice due to the distinct and superior ferroelectricity found in its metastable phase. Stabilizing the metastable ferroelectric phase and delineating the underlying growth mechanism, however, are still challenging. Recent discoveries of metastable ferroelectric Hf0.5Zr0.5O2 epitaxially grown on structurally dissimilar perovskite oxides have triggered intensive investigations on the ferroelectricity in materials that are nonpolar in bulk form. Nonetheless, the growth mechanism for the unique fluorite/perovskite heterostructures has yet to be fully explored. Here we show that the metastable ferroelectric Hf0.5Zr0.5O2 films can be stabilized even on a one-unit-cell-thick perovskite La0.67Sr0.33MnO3 buffer layer. In collaboration with scanning transmittance electron microscopy (STEM) based characterizations, we…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Semiconductor materials and devices · MXene and MAX Phase Materials
