Theoretical Study of High Performance Germanium Nanowire Quantum Dot

TL;DR

This study investigates germanium nanowire quantum dots, revealing their Coulomb oscillation behavior at low temperatures and potential advantages for high-capacity quantum flash devices due to their high mobility.

Contribution

It provides a theoretical analysis of Ge-NWQD properties, highlighting their temperature-dependent Coulomb oscillations and implications for quantum flash device design.

Findings

Coulomb oscillations are more apparent in Ge-NWQD at low temperatures.

Oscillations diminish with increasing temperature due to phonon scattering.

Ge-NWQD's high mobility enhances quantum flash device performance.

Abstract

In this report, we demonstrate that Ge-NWQD (nanowire quantum dots) at low temperatures exhibit apparent Coulomb oscillations than that in Si-NWQD. These oscillations gradually disappear as the temperature increases, indicating the influence of phonon scattering. The increase in Coulomb oscillations enables the device to exhibit multi-level characteristics at low voltage in quantum flash, and the lower barrier high and high mobility of Ge make it advantageous for increasing the storage capacity of quantum flash devices. This research provides design guidelines for optimization of high-performance quantum flash devices.