Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors

TL;DR

This paper presents a comprehensive physics-based model for 2D Schottky barrier FETs, accurately capturing charge transport across a broad bias range and validated against experimental and simulation data.

Contribution

It introduces a novel analytical model that incorporates thermionic, field-emission, and thermionic field-emission processes for 2D SB-FETs, extending applicability beyond near-equilibrium conditions.

Findings

Model accurately predicts I-V characteristics of 2D SB-FETs.

Validated against experimental data from MoTe2 and MoS2 devices.

Shows good agreement with TCAD simulation results.

Abstract

In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and field-emission processes of carrier injection that occur at a Schottky contact. The numerical model is then simplified to yield an analytic equation for current versus voltage ($I$-$V$) in the SB-FET. The lateral electric field at the junction, controlling the carrier injection, is obtained by accurately modeling the electrostatics and the tunneling barrier width. Unlike previous SB-FET models that are valid for near-equilibrium conditions, this model is applicable for a broad bias range as it incorporates the pertinent physics of thermionic, thermionic field-emission, and field-emission processes from a 3D metal into a 2D semiconductor. The $I$-$V$ model is validated against the measurement data of 2-, 3-, and 4-layer ambipolar MoTe$_2$ SB-FETs fabricated in our lab, as well as the published data of unipolar 2D SB-FETs using MoS$_2$. Finally, the model's physics is tested rigorously by comparing model-generated data against TCAD simulation data.